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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD198 DESCRIPTION *With TO-3 package *High breakdown voltage APPLICATIONS *voltage regulator *Inverters *Switching mode power supply PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=75 CONDITIONS Open emitter Open base Open collector VALUE 300 300 6 1 25 165 -55~200 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IE=1mA ;IC=0 IC=1.0A; IB=0.1A IC=1.0A; IB=0.1A VCB=300V; IE=0 VEB=6V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=10V 30 25 MIN 300 6 TYP. 2SD198 MAX UNIT V V 1.0 1.5 0.1 0.1 300 V V mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD198 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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